| 摘要 |
因應市場對電子產品輕薄之需求，半導體產業不斷地快速發展。為解決目前二維製程微縮上所遇到的困難，讓摩爾定律（Moore’s
Law）能夠延續，應用矽導通孔（TSV）連接之三維積體電路（3D
IC）構裝技術成為產業積極發展的重要技術－其關鍵便在於矽導通孔製程。此矽導通孔的孔洞填充製程，屬具有優良導電特性與熱導率的銅電鍍製程為業界中最常使用的方式，但即使技術相對成熟，仍有許多製程困難處，像是電鍍品質相當依賴種子層(Seed
Layer)的沉積品質，以及須使用特殊設計之電鍍設備及鍍液，且電鍍時間往往相當長，因此如何突破目前業界中矽導通孔的發展瓶頸，開發出一低成本，且高品質的矽導通孔，為業界中的首要課題。
因此本研究提出將奈米化的銀漿導入矽導通孔，藉由銀金屬奈米化後之低熔點，且保有銀金屬導電性、熱傳導佳的性能，並配合基板結構設計之想法，以單個製程技術，同時完成孔洞金屬填充，與正背面所需的電路設計圖案，以提升此製程之價值與競爭性。
根據實驗結果，奈米銀成功利用實驗探討的近似最佳參數，獲得良好之矽導通孔品質，並且導入八吋矽晶圓，驗證其奈米銀金屬化於晶圓級矽導通孔的製程性。總結，本研究開發出一符合業界標準之金屬化製程技術，有效提供出一成本低廉、品質佳且具量產性之矽導通孔製程，為矽導通孔金屬化製程增加一新選擇。
關鍵字：矽導通孔、奈米銀、金屬化製程、大氣燒結、真空燒結
In order to satisfy the market demand on lighter and smaller
electronic products, the semiconductor industry has developed
rapidly. To solve challenges on shrinkage process and to make
the Moore’s law continue, three-dimensional integrated circuit
(3D IC) technology with through-silicon via (TSV) becomes the
major technology and so urgent to be carried out. In the
metallization process of TSV, the copper electro-plating is most
popular in the Semiconductor Industry, because this
metallization process has high electric conductivity and thermal
conductivity. However, it has some problems to be solved, such
as, while the quality of the seed layer deposition is important,
the process throughput is very low, and specially designed
equipment and plating liquid are needed. Therefore, how to
breakthrough the restrictions of the TSV is the most important
issue in the industry.
Therefore, this study presents nano silver to introduce into TSV
metallization process, with a low melting point of silver after
Nanotech, and retain high electric conductivity. Moreover, we
will use the idea of the structural design, with a single
process technology to complete holes metal filling and design of
double side pattern at the same moment, letting this process
enhance the value and competitiveness.
According to the results, using nano silver of approximate
optimum parameters to get a good quality of TSV, and introducing
into 8 inch silicon wafer to verify process capability of wafer
level TSV is successful. In summary, the thesis developed a TSV
metallization process of the industry standard, and effectively
provide a low-cost, good quality and high throughput, providing
TSV metallization process a new choice in industry.
Key words: TSV, Nano Silver, Metallization Process, Air
Sintering, Vacuum Sintering
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