| 大綱 |
本研究之目的在於提升矽載板之製程中強度，在進入應力較大之製程前，先行提升整體載板強度，以利完成載板之製作。矽載板製程之中，金屬種子層沉積主要是作為被鍍載板之電極，較少有研究就種子層與矽材之間關係，對於整體載板強度去做探討研究，因此，本研究欲從種子層與矽材的結構進行調整，提升整體載板之機械強度。根據實驗結果可得知，增加
0.9μm 厚度的金屬種子層厚度，矽載板強度即可有 21.56%的提升，將金屬種子層之接面從研磨面調整至中心線粗糙度 1.0μm
時，矽載板強度即可有
46.54%的提升，從兩部份之實驗，確認了厚度強化方向與接面強化方向為可行。最後，將厚度參數與接面參數調整後之強化製程實驗應用於業界樣品，確認在業界樣品應用上具正面之成效。總結，本研究開發出一業界可用之強化製程，有效提升矽載板之強度，確認了藉由調整金屬種子層製程，來提升矽載板機械強度之強化方向是可行的。
關鍵字：矽載板、晶圓強度、濕式化學蝕刻、強化製程
The targets at developing a
strengthened process that can enhance the silicon carriers
strength, before them being run into larger stress process and
crack. Seed layer deposition process is to be as the electrode
for the eletroplating in silicon process flows, but is less to
be discussed for the carrier strength. The study developed a
strengthen process for silicon carriers by changing the seed
layer condition. From the results, silicon carriers could have
21.56% strength enhancement by adding 0.9μm thick seed layer.
Futhermore, silicon carriers could have 46.54% strength
enhancement by adjusting the surface roughness between the
silicon and the seed layer metal from grinding surface to the
etching roughness Ra 1μm surface. We know that the seed layer
thickness and the surface can improve the carrier strength in
this two experiments. In the third experiment, we used the
parameters which found at the thickness and surface experiments
to strength the silicon carriers as business samples, and had
positive results.
Keywords：Silicon Carrier,
Silicon Strength, Wet Chemical Etching, Strengthen Process.
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