| 大綱 |
矽晶穿孔（TSV）製程為三維積體電路、系統級封裝、晶圓級封裝（WLP）等三維堆疊封裝科技之核心關鍵技術，近年來採用矽晶穿孔技術進行三維堆疊封裝儼然已成為封裝業者發展之主要趨勢。探索技術現況，深反應性離子蝕刻（DRIE）製程小從數微米直至數百微米以上尺寸之矽晶穿孔製作皆能勝任，是目前最廣為半導體業者所採用之矽晶穿孔製程方法。然而，深反應性離子蝕刻製程設備相當昂貴，無形中限制了此蝕刻工藝之應用層面。本論文有兩大研究重點，首先係創新矽晶穿孔製程之研發；接續為創新矽晶穿孔製程導入發光二極體封裝基板（LEDsub-mount）應用之分析與驗證。本研究使用灰關聯田口（Grey-Taguchi）方法尋找濕式蝕刻製程之多品質最佳參數，藉由最佳化蝕刻製程移除奈秒雷射製程產生之矽晶缺陷。應用上針對發光二極體封裝基板之散熱性能、基板絕緣電性、高溫可靠度等關鍵特性進行分析與探討。實驗結果顯示灰關聯田口方法可確實找到區域多重品質最佳化參數並有效移除雷射加工產生之矽晶缺陷；採用矽晶穿孔基板作為發光二極體封裝基板能得到較氧化鋁基板優異之散熱性能；創新矽晶穿孔製程導入發光二極體封裝基板應用相較於採奈秒雷射製程能提昇
623
%之崩潰電壓；晶圓級發光二極體封裝基板具備優異之高溫可靠度特性。本文提出之創新矽晶穿孔製程具備有，較低加工成本、高加工效率、優異加工品質等適合半導體相關業者將製程導入量產之關鍵特性。而晶圓級發光二極體封裝基板之關鍵特性與可靠度結果闡述了晶圓級發光二極體封裝基板取代陶瓷封裝基板之潛在機會。
關鍵字：矽晶穿孔、晶圓級封裝、深反應性離子蝕刻、發光二極體封裝基板、灰關聯田口方法
Through-silicon via (TSV) is an
emerging technology for three-dimensional integrated circuit,
system-in-packaging, and wafer-level packaging (WLP)
applications. Among several available TSV formation methods,
Bosch deep reactive ion etching (DRIE) is widely used because it
enables the fabrication of TSVs with almost any diameter, from
the submicrometer level to hundreds of micrometers. However, the
high cost of Bosch DRIE makes it uneconomical for industrial
production. This dissertation is commenced with the development
of innovative TSV formation approach, then, the feasibility of
the proposed new drilling strategy adopted in a practical
light-emitting-diode (LED) sub-mount application is
demonstrated. Here, an effective method for the optimization of
multiple performance characteristics of WCE process to remove
TSV defects based on Grey-Taguchi method is introduced. In the
LED sub-mount application study, the thermal dissipation
performance, dielectric breakdown voltage based on 1-μm-thick
silicon dioxide dielectric layer, and the high-temperature
reliability of silicon LED sub-mount were investigated.
Experimental results confirmthe efficacy of the multiple
performance optimization method based on Grey-Taguchimethod as
well as demonstrating that the combined approach effectively
eliminates theunwanted material formed by nanosecond (ns) laser
pulses. The results also reveal thatthe silicon LED sub-mount
shows superior thermal dissipation performance, the proposed
innovative TSV formation approach represents an improvement of
623 %dielectric breakdown voltage over conventional ns laser
drilling method with the same oxidation process condition, and
the WLP LED sub-mount contains well high-temperature reliability
feature. As a result, the proposed new TSV formationapproach
affords superior TSV quality, higher TSV throughput, and lower
processingcost than Bosch DRIE. These advantages could provide
the necessary impetus for rapid VIcommercialization of the
several high-density fabrication methodologies that depend on
TSVs. Through this work, it has been demonstrated that with the
proposed newapproach, it is feasible to achieve a cost-effective
silicon LED sub-mount for replacingthe conventional ceramic
sub-mounts in high brightness LED package application.
Keywords：Through-silicon via (TSV),
Wafer-level packaging (WLP), Deep reactive ion etching (DRIE),
Light-emitting-diode (LED) sub-mount, Grey-Taguchi method
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