| 摘要 |
隨著高功率 LED 的發展，散熱成為 LED 封裝的一大課題，傳統砲彈型封裝已不敷使用，取而代之的是使用陶瓷基板以 SMT
(surface-mount technology)
封裝，而陶瓷基板氧化鋁（Al2O3）和氮化鋁（AlN）基板分別存在熱傳導係數偏低和材料成本偏高的問題，由於再生矽晶圓
(reclaimed wafer) 具有適用晶圓級封裝和低材料成本的優勢，因此本論文提出以晶圓級矽導通孔基板
(through-silicon-viawafer；TSV wafer) 作為 LED 封裝基板的新選擇。在 TSV
矽基板製程中，以奈秒雷射鑽孔搭配濕蝕刻製程製作 TSV，並以直接鍍銅（DPC）薄膜技術完成金屬圖形。由於矽基板需以 SiO2
作為絕緣層，但其熱傳導係數偏低，因此以 Al2O3 基板、AlN 基板和不同 SiO2 厚度之 TSV
矽基板分別針對散熱效能、絕緣性和破壞強度進行實驗分析與比較，並且針對 TSV 矽基板在高溫中的可靠度進行驗證。接著以 ANSYS
有限元素分析軟體，模擬在高功率 LED封裝下，使用不同材料封裝基板之熱阻與結構應力。實驗結果顯示，TSV
矽基板在散熱效能和絕緣性上皆有很好的表現，惟在基板強度上較陶瓷基板差；而模擬結果顯示，使用 TSV
矽基板有效降低構裝熱阻、基板熱應力和緩衝 LED 晶粒與金屬芯基板（又稱鋁基板）（metal core printed
circuitboard ；MCPCB）間熱膨脹係數不匹配（CTE mismatch）問題。綜觀以上分析結果，TSV
矽基板十分有潛力成為高功率 LED 封裝散熱基板之新選擇。
關鍵字：矽導通孔基板、陶瓷基板、基板絕緣性、三點彎曲測試、高功率 LED 封
裝、構裝熱阻、熱應力
With the development of high
power LED, heat dissipation becomes a major issue of LED
package. The traditional leaded package can no longer meet the
demand for effective heat dissipating, so it is replaced by the
SMT (surface-mount technology) with ceramic substrate. However,
ceramic substrates, Al2O3 and AlN substrate, have issues of low
thermal conductivity and high material cost respectively. Due to
the capability of wafer-level package and low material cost
provided by reclaimed wafer, the thesis provides a new option of
TSV wafer as the LED package substrate. In TSV substrate
process, the innovative method with ns-laser drilling
incorporating wet etching is given, and then direct plated
copper (DPC) is used for pattern metallization. Si substrate
requires an insulation layer of silicon dioxide (SiO2), which
thermal conductivity is much lower than substrate. For this
reason, the experiment is designed to analyze and compare Al2O3,
AlN and Si substrate with different SiO2 thickness about thermal
performance, insulation and breaking strength of substrate.
Furthermore, to verify the reliability in high temperature
process, high temperature test is done for TSV wafer. Then,
finite element analysis software, Ansys, is applied to simulate
thermal resistance and stress analysis for high power LED
package with different substrates. The experimental results
reveal that TSV Si substrate shows both good performance on
thermal efficiency and insulation but lower failure strength
comparing with the ceramic substrate. The simulation results
reveal that TSV substrate effectively reduces packaging thermal
resistance and thermal stress in substrate, moreover, buffering
CTE mismatch between LED die and metal core printed circuit
board V (MCPCB). As mentioned above, TSV Si substrate has
strong potential to become the new option of high power LED
package substrate.
Keywords：TSV substrate, ceramic
substrate, insulation, three-point bending test, high power LED
package, thermal insulation, thermal stress
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