This study investigated the
photon thermal treatment by ultraviolet laser
direct-write system on two promising conducting films,
including ZnO:Al (AZO) and graphene. The films
characteristics were systematically analyzed, using a
4-point probe instrument, an
ultraviolet-visible-near-infrared (UV-vis-NIR)
spectrophotometer, X-ray diffraction (XRD), Raman
spectroscopy, scanning electron microscopy (SEM), atomic
force microscopy (AFM), before and after the laser
annealing process.
In the laser annealing process
of AZO material, the experimental results indicated that
varying the laser fluence and annealing speed affected
the optical and electrical properties of the AZO films.
After the laser annealing process, there was a slight
change in the visible region with approximately 84.7 %
of transmittance spectra.The
maximum resistivity values of the annealed AZO films
decreased from 1.15
Ωcm
to
1.17 × 10−2 Ω.cm,approximately 99 % higher than the initial value. In
addition, the laser fluence not only influenced the
structural properties of the films, but also improved
the crystallinity of the films after the laser annealing
process, with minimal changes in the thickness of the
films and the concentration of the elements in the
films. The root mean square surface roughness (Rrms) of
the films gradually increased as the laser fluence
increased. Moreover, according to the XRD pattern of the
films, the intensity of the main peak corresponding to
the (002) direction increased as the laser fluence
increased. The average grain size (20 nm) of the
annealed films, determined using the Scherrer equation,
was smaller than that of the as-deposited thin film
(21.7 nm) due to the low temperature effect in the laser
annealing process.
In the laser annealing process
of graphene material, the laser fluence had a great
effect on the electrical properties of the graphene thin
films. The sheet resistance of printed graphene thin
films decreased from 262.22 Ω/sq to 97.27Ω/sq after
laser annealing, approximately 62.9 % lower than the
initial value. In addition, based on the results of
Raman spectrum, the ID/IG decreased from 0.75 to 0.3,
showing that the structural disorder in graphene
structural was reduced. Furthermore, the selective laser
processing and the electrothermal response test of
printed graphene thin film on a glass substrate were
conducted to show the potential of multi-zone heater and
further applications.
Keyword: Laser annealing,
aluminum-doped zinc oxide, graphene, selective laser
processing, electrothermal response.